A Detailed Computer Analysis of SiC And GaN Based IMPATT Diodes Operating at Ka, V And W Band

From 1965 onwards lot of developments and simulation works have been done in the field of IMPATT diode to improve its power output, efficiency and frequency range of operation using low band gap material like Si, GaAs, InP etc. In this paper a comprehensive study has been made on IMPATT diodes based on high band gap materials, GaN (Wz) and SiC (4H) operating at Ka, V and W-band respectively relative to fabrication and it has been found that SiC based IMPATT gives improved performance at low frequency bands whereas GaN based IMPATT’s show better response at higher frequency bands. Efficiency around 23% is obtained from SiC IMPATT and about 17% for GaN IMPATT diode. In general the power frequency relation for any device is inverse, but power decreases at a faster rate in case of SiC IMPATT than a GaN IMPATT with the increase of frequency.